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  Electron beam lithography (EBX)
Electron beam lithography uses a focused electron beam to write ultra fine patterns on semiconductor substrates covered by a resist material. The instruments are basically scanning electron microscopes designed for the extreme precision and stability required to write large and complex patterns with nanometer linewidths.

The instruments are controlled by large computer systems able to convert CAD drawings into exposure sequences.

The instruments shown here represent both systems designed for research in quantum electronics as well as production of high density masks and reticles.
   
 

JBX-5000LS/E Direct write tool

Specifications
Exposure: Vector scan, spot beam
Acc. Voltage: 25 and 50 kV
Beam source: LaB6
Current density: 50 A/cm2max.
Beam size: 8 nm to 1,000 nm
Acc.Voltage: 0.5 - 30 kV
Workpiece size: Max. 150 mm diam.
 

JBX-6000FS/E Direct write tool

Specifications
Exposure: Vector scan, spot beam
Acc. Voltage: 25 and 50 kV
Beam source: ZrO/W TFEG
Current density:  2,000 A/cm2 max .
Beam size: 5 nm to 200 nm.
Workpiece size: Max. 200 mm diam.
 

JBX-9300FS Direct write tool

Specifications
Exposure: Vector scan, spot beam
Acc. Voltage: 50 and 100 kV
Beam source: ZrO/W TFEG
Current density: 4,000 A/cm2 max .
Beam size: 4 nm to 200 nm.
Workpiece size: Max. 300 mm diam

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JBX-9000MVII Mask making tool

Specifications
Acc. Voltage: 50 kV
Beam source: LaB6
Workpiece size: Max. 230 mm square
Field stiching

+ 11 nm

Overlay accuracy

+ 20 nm

 

JBX-3030MV Mask making tool

Specifications
Acc. Voltage: 50 kV
Beam source: LaB6
Workpiece size: Max. 178 mm square
Field stiching:

+ 9 nm

Overlay accuracy:

+ 12 nm

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  Updated September 19, 2003.