Normal inspection SEMs observe only the surface of a wafer. To study the inside normally means timeconsuming cutting and preparation outside the microscope. The JFS-9855S has a focused ion beam (FIB) milling system built into the scanning electron microscope. The fine ion beam grinds out a rectangular hole in an IC to create a cross section which can be studied by the SEM/SIMS imaging including elemental analysis of the cross-section.

The system is designed for fast throughput and automated operation with linking to optical review devices and support of CIM (Computer Integrated Manufacturing System).

	JFS-9855S / 9955S Dual beam tool
	Specifications Resolution EOS: 5 nm at 1 kV Resolution FIB:  8 nm at 30 kV Electron source: Thermal FEG Ion sorce: Ga liquid metal Sample size:  150/200/300 mm Sample loading: Robot auto loader