Apart from giving superb images at a wide range of magnifications and having powerful facilities for electron diffraction studies, these TEMs are often equipped with analytical spectrometers for X-ray analysis and in-column or post-column electron energy spectroscopy and energy filtered imaging.

The material research models of the 2200/2100/2010 series can produce an intense focused beam of less than 0.5 nm size. This capability  combined with the high electron intensity achieved with a field emission gun results in a powerful system for sub-nanometer analysis and ultrahigh resolution HAADF STEM images.

All these microscopes can be equipped with a range of polepieces permitting the user to choose an optimum configuration depending on applications.

The specifications on resolution and magnification given below are all based on the high resolution versions.

	JEM-2500SE Semiconductor TEM
	Specifications TEM point resolution 0.24 nm STEM lattice 0.2 nm SEI point 1.0 nm TEM mag. 4,000 - 20,000,000 X STEM mag. 100 - 10,000,000 X Emitter Thermal field emitter Height 2.1 m Dry vacuum system
	JEM-2100F Field emission TEM
	Specifications Point resolution 0.194 nm Acc. Voltage 80 - 200 kV Magnification 50 - 1,500,000 X Emitter Thermal field emitter
	JEM-2200FS Field emission energy filter TEM
	Specifications Point resolution 0.194 nm Acc. Voltage max 200 kV Magnification 100 - 1,500,000 X Emitter Thermal field emitter Spectrometer In-column filter Energy resolution 0.8 eV Energy dispersion max 300 µm/eV
	JEM-2010  High resolution TEM
	Specifications Point resolution 0.194 nm Acc. Voltage 80 - 200 kV Magnification 50 - 1,500,000 X Emitter LaB6
	JEM-2010HC High contrast TEM
	Specifications Point resolution 0.31 nm Acc. Voltage 80 - 200 kV Magnification 50 - 1,500,000 X Emitter LaB6